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SPB80N06S2L-06 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N06S2L-06

Obsolete
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

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SPB80N06S2L-06 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N06S2L-06

Obsolete
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB80N06S2L-06
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds5050 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs6.3 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SPB80N Series

N-Channel 55 V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources