
SPB80N06S2L-06
ObsoleteInfineon Technologies
MOSFET N-CH 55V 80A TO263-3
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SPB80N06S2L-06
ObsoleteInfineon Technologies
MOSFET N-CH 55V 80A TO263-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SPB80N06S2L-06 |
|---|---|
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 6.3 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SPB80N Series
N-Channel 55 V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
Documents
Technical documentation and resources