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SPB80N04S2-04 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N04S2-04

Obsolete
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

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SPB80N04S2-04 - TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N04S2-04

Obsolete
Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB80N04S2-04
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC
Input Capacitance (Ciss) (Max) @ Vds6980 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs3.4 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SPB80N Series

N-Channel 40 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources