MOSFET N-CH 75V 80A TO263-3
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 6.8 mOhm | 6820 pF | 233 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 75 V | 2 V | N-Channel | 300 W | -55 °C | 175 ░C | PG-TO263-3-2 | |||
Infineon Technologies | 20 V | 10 V | MOSFET (Metal Oxide) | 3.4 mOhm | 6980 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 40 V | 4 V | N-Channel | 300 W | -55 °C | 175 ░C | PG-TO263-3-2 | 170 nC | |||
Infineon Technologies | 20 V | 4.5 V 10 V | MOSFET (Metal Oxide) | 6.3 mOhm | 5050 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 V | 2 V | N-Channel | 250 W | -55 °C | 175 ░C | PG-TO263-3-2 | 150 nC | |||
Infineon Technologies | 20 V | 10 V | MOSFET (Metal Oxide) | 7.7 mOhm | 3660 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 V | 4 V | N-Channel | 300 W | -55 °C | 175 ░C | PG-TO263-3-2 | 187 nC | Automotive | AEC-Q101 |