
S25HS512TFANHV010
ActiveIC FLASH 512MBIT SPI/QUAD 8WSON
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S25HS512TFANHV010
ActiveIC FLASH 512MBIT SPI/QUAD 8WSON
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | S25HS512TFANHV010 |
|---|---|
| Clock Frequency | 166 MHz |
| Memory Format | FLASH |
| Memory Interface | Quad I/O, QPI, SPI |
| Memory Organization | 64 M |
| Memory Size | 64 MB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 105 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-WSON (6x8) |
| Technology | FLASH - NOR (SLC) |
| Voltage - Supply [Max] | 2 V |
| Voltage - Supply [Min] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1690 | $ 8.39 | |
Description
General part information
S25HS512 Series
The S25HS512TFANHV010 is a member ofInfineon's SEMPER™ NOR Flash Memory family. It features a 512 Mbit density and operates on a Quad SPI Interface with a bandwidth of 102 MByte/s at 1.8 V. The device also provides a Single/Double Data Rate (SDR/DDR) interface frequency of 166/102 MHz respectively. The product is built around Infineon's 45-nm MIRRORBIT™ technology, offering more data storage per memory array cell.
Documents
Technical documentation and resources
No documents available