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S25HS512TFANHV013 - 8-WDFN Exposed Pad

S25HS512TFANHV013

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Infineon Technologies

512MBIT SPI WSON-8(6X8) NOR FLASH ROHS

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S25HS512TFANHV013 - 8-WDFN Exposed Pad

S25HS512TFANHV013

Active
Infineon Technologies

512MBIT SPI WSON-8(6X8) NOR FLASH ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationS25HS512TFANHV013
Clock Frequency166 MHz
Memory FormatFLASH
Memory InterfaceQuad I/O, QPI, SPI
Memory Organization64 M
Memory Size64 MB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]105 °C
Operating Temperature [Min]-40 °C
Package / Case8-WDFN Exposed Pad
Supplier Device Package8-WSON (6x8)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2 V
Voltage - Supply [Min]1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 8.04
LCSCPiece 1$ 24.74
200$ 9.87
500$ 9.54
1000$ 9.38

Description

General part information

S25HS512 Series

The S25HS512TFANHV013 from the SEMPER™ NOR Flash Memory family, offers 512 Mbit density. It features Infineon's 45-nm MIRRORBIT™ technology for optimized data storage and boasts a Quad SPI interface with a bandwidth of 102 MBytes/s. Operating at a modest voltage of 1.8 V, this advanced memory solution showcases both Single Data Rate (SDR) and Double Data Rate (DDR) options, clocking frequencies of 166 MHz and 102 MHz respectively, for efficient data processing and transmission.

Documents

Technical documentation and resources

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