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DMP3056LVT-7

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Diodes Inc

MOSFET P-CH 30V 4.3A TSOT-26

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DMP3056LVT-7

Active
Diodes Inc

MOSFET P-CH 30V 4.3A TSOT-26

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3056LVT-7
Current - Continuous Drain (Id) @ 25°C4.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs11.8 nC
Input Capacitance (Ciss) (Max) @ Vds642 pF
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max) [Max]1.38 W
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

DMP3056LDMQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Documents

Technical documentation and resources