DMP3056LDMQ Series

SINGLE P-Channel Enhancement Mode Field Effect Transistor

Catalog

SINGLE P-Channel Enhancement Mode Field Effect Transistor

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	Power Dissipation (Max) [Max]
Diodes Inc DMP3056LSSQ-13	20 V	969 pF	8-SO	Automotive	4.9 A	MOSFET (Metal Oxide)	1.2 W	AEC-Q101	4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	17.3 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LDMQ-7	20 V	948 pF	SOT-26	Automotive	4.3 A	MOSFET (Metal Oxide)	1.25 W	AEC-Q101	4.5 V 10 V	Surface Mount	SOT-23-6			21.1 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LSD-13		722 pF	8-SO		6.9 A	MOSFET (Metal Oxide)				Surface Mount	8-SOIC	3.9 mm	0.154 in		2.1 V	45 mOhm		30 V	-55 °C	150 °C	2 P-Channel	13.7 nC	2.5 W	Logic Level Gate
Diodes Inc DMP3056LDM-7	20 V	948 pF	SOT-26		4.3 A	MOSFET (Metal Oxide)	1.25 W		4.5 V 10 V	Surface Mount	SOT-23-6			21.1 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LSS-13	20 V	722 pF	8-SOP		7.1 A	MOSFET (Metal Oxide)	2.5 W		4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	6.8 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LVT-7	25 V	642 pF			4.3 A	MOSFET (Metal Oxide)			4.5 V 10 V						2.1 V		P-Channel	30 V	-55 °C	150 °C		11.8 nC			1.38 W
Diodes Inc DMP3056L-7	25 V	642 pF	SOT-23-3		4.3 A	MOSFET (Metal Oxide)	1.38 W		4.5 V 10 V	Surface Mount	SC-59 SOT-23-3 TO-236-3				2.1 V		P-Channel	30 V	-55 °C	150 °C		11.8 nC

Catalog

SINGLE P-Channel Enhancement Mode Field Effect Transistor

Key Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMP3056LSSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.