DMP3056LSS-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3056LSS-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques +2

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3056LSS-13

Current - Continuous Drain (Id) @ 25°C	7.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds	722 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

DMP3056LDMQ Series

SINGLE P-Channel Enhancement Mode Field Effect Transistor

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	Power Dissipation (Max) [Max]
Diodes Inc DMP3056LSSQ-13	20 V	969 pF	8-SO	Automotive	4.9 A	MOSFET (Metal Oxide)	1.2 W	AEC-Q101	4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	17.3 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LDMQ-7	20 V	948 pF	SOT-26	Automotive	4.3 A	MOSFET (Metal Oxide)	1.25 W	AEC-Q101	4.5 V 10 V	Surface Mount	SOT-23-6			21.1 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LSD-13		722 pF	8-SO		6.9 A	MOSFET (Metal Oxide)				Surface Mount	8-SOIC	3.9 mm	0.154 in		2.1 V	45 mOhm		30 V	-55 °C	150 °C	2 P-Channel	13.7 nC	2.5 W	Logic Level Gate
Diodes Inc DMP3056LDM-7	20 V	948 pF	SOT-26		4.3 A	MOSFET (Metal Oxide)	1.25 W		4.5 V 10 V	Surface Mount	SOT-23-6			21.1 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LSS-13	20 V	722 pF	8-SOP		7.1 A	MOSFET (Metal Oxide)	2.5 W		4.5 V 10 V	Surface Mount	8-SOIC	3.9 mm	0.154 in	6.8 nC	2.1 V	45 mOhm	P-Channel	30 V	-55 °C	150 °C
Diodes Inc DMP3056LVT-7	25 V	642 pF			4.3 A	MOSFET (Metal Oxide)			4.5 V 10 V						2.1 V		P-Channel	30 V	-55 °C	150 °C		11.8 nC			1.38 W
Diodes Inc DMP3056L-7	25 V	642 pF	SOT-23-3		4.3 A	MOSFET (Metal Oxide)	1.38 W		4.5 V 10 V	Surface Mount	SC-59 SOT-23-3 TO-236-3				2.1 V		P-Channel	30 V	-55 °C	150 °C		11.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Digi-Reel®	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Tape & Reel (TR)	2500	$ 0.18
		5000	$ 0.17
		12500	$ 0.16
		25000	$ 0.16

Description

General part information

DMP3056LDMQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

DMP3056LSS-13

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DMP3056LSS-13

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Technical Specifications

DMP3056LDMQ Series

Pricing

Description

DMP3056LDMQ Series

Documents

Datasheet

Recommended Soldering Techniques

Package PDF

Datasheet

DMP3056LDMQ Series