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STD80N10F7 - MFG_DPAK(TO252-3)

STD80N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0085 OHM TYP., 70 A STRIPFET F7 POWER MOSFET IN DPAK PACKAGE

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DocumentsDatasheetDatasheet+16
STD80N10F7 - MFG_DPAK(TO252-3)

STD80N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0085 OHM TYP., 70 A STRIPFET F7 POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD80N10F7
Current - Continuous Drain (Id) @ 25°C70 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]3100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]85 W
Rds On (Max) @ Id, Vgs10 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 2500$ 0.69
5000$ 0.68
DigikeyCut Tape (CT) 1$ 1.77
10$ 1.47
100$ 1.17
500$ 0.99
1000$ 0.84
Digi-Reel® 1$ 1.77
10$ 1.47
100$ 1.17
500$ 0.99
1000$ 0.84
Tape & Reel (TR) 2500$ 0.80
5000$ 0.77
12500$ 0.74
NewarkEach (Supplied on Cut Tape) 1$ 2.39
10$ 1.76
25$ 1.66
50$ 1.57
100$ 1.47
250$ 1.39
500$ 1.25
1000$ 1.17

Description

General part information

STD80N10F7 Series

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.