STD80N6F6
ObsoleteAUTOMOTIVE-GRADE N-CHANNEL 60 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A DPAK PACKAGE
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STD80N6F6
ObsoleteAUTOMOTIVE-GRADE N-CHANNEL 60 V, 4.4 MOHM TYP., 80 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A DPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD80N6F6 |
|---|---|
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 7480 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 120 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
STD80N10F7 Series
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Grade | Technology | Vgs(th) (Max) @ Id | Package / Case | Power Dissipation (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 20 V | 60 V | AEC-Q101 | 10 V | 7480 pF | DPAK | -55 °C | 175 ░C | N-Channel | 122 nC | 6.5 mOhm | Automotive | MOSFET (Metal Oxide) | 4.5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 120 W | Surface Mount | ||||
STMicroelectronics | 20 V | 40 V | AEC-Q101 | 10 V | DPAK | -55 °C | 175 ░C | N-Channel | 36 nC | 6 mOhm | Automotive | MOSFET (Metal Oxide) | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 70 W | Surface Mount | |||||
STMicroelectronics | 20 V | 100 V | 10 V | DPAK | -55 °C | 175 ░C | N-Channel | 10 mOhm | MOSFET (Metal Oxide) | 4.5 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount | 45 nC | 70 A | 85 W | 3100 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STD80N10F7 Series
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources