STD80N10F7 Series

Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package

Catalog

Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Grade	Technology	Vgs(th) (Max) @ Id	Package / Case	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STD80N6F6	20 V	60 V	AEC-Q101	10 V	7480 pF	DPAK	-55 °C	175 ░C	N-Channel	122 nC	6.5 mOhm	Automotive	MOSFET (Metal Oxide)	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	120 W	Surface Mount
STMicroelectronics STD80N4F6	20 V	40 V	AEC-Q101	10 V		DPAK	-55 °C	175 ░C	N-Channel	36 nC	6 mOhm	Automotive	MOSFET (Metal Oxide)	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	70 W	Surface Mount
STMicroelectronics STD80N10F7	20 V	100 V		10 V		DPAK	-55 °C	175 ░C	N-Channel		10 mOhm		MOSFET (Metal Oxide)	4.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		Surface Mount	45 nC	70 A	85 W	3100 pF

Catalog

Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package

Description

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.