DMT6016LPS-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 60V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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DMT6016LPS-13

Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 60V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +2

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT6016LPS-13

Current - Continuous Drain (Id) @ 25°C	10.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	864 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	1.23 W
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

DMT6016LFDF Series

60V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Diodes Inc DMT6016LFDF-13	3 V	60 V	-55 °C	150 °C	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	N-Channel	Surface Mount	8.9 A	820 mW	16 mOhm	MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V
Diodes Inc DMT6016LPSW-13	2.5 V	60 V	-55 °C	150 °C	PowerDI5060-8 (Type UX)	8-PowerTDFN	N-Channel	Surface Mount Wettable Flank	11.2 A 43 A			MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V	16.5 mOhm	2.84 W 41.67 W
Diodes Inc DMT6016LPS-13	2.5 V	60 V	-55 °C	150 °C	PowerDI5060-8	8-PowerTDFN	N-Channel	Surface Mount	10.6 A		16 mOhm	MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V		1.23 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.56
		10	$ 0.48
		100	$ 0.33
		500	$ 0.28
		1000	$ 0.24
	Digi-Reel®	1	$ 0.56
		10	$ 0.48
		100	$ 0.33
		500	$ 0.28
		1000	$ 0.24
	Tape & Reel (TR)	2500	$ 0.21
		5000	$ 0.20
		12500	$ 0.19

Description

General part information

DMT6016LFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.