Technical Specifications
Parameters and characteristics for this part
| Specification | DMT6016LFDF-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.9 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 864 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) [Max] | 820 mW |
| Rds On (Max) @ Id, Vgs [Max] | 16 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.18 | |
| 20000 | $ 0.17 | |||
Description
General part information
DMT6016LFDF Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources