DMT6016LFDF Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Diodes Inc DMT6016LFDF-13	3 V	60 V	-55 °C	150 °C	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad	N-Channel	Surface Mount	8.9 A	820 mW	16 mOhm	MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V
Diodes Inc DMT6016LPSW-13	2.5 V	60 V	-55 °C	150 °C	PowerDI5060-8 (Type UX)	8-PowerTDFN	N-Channel	Surface Mount Wettable Flank	11.2 A 43 A			MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V	16.5 mOhm	2.84 W 41.67 W
Diodes Inc DMT6016LPS-13	2.5 V	60 V	-55 °C	150 °C	PowerDI5060-8	8-PowerTDFN	N-Channel	Surface Mount	10.6 A		16 mOhm	MOSFET (Metal Oxide)	17 nC	20 V	864 pF	4.5 V 10 V		1.23 W

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package - Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.