IRF7507TRPBF

Obsolete

Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 2.4 A, 2.4 A, 0.085 OHM

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IRF7507TRPBF

Obsolete

Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 2.4 A, 2.4 A, 0.085 OHM

Deep-Dive with AI

DocumentsEOL Notices EN IR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7507TRPBF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.7 A, 2.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	700 mV

IRF7507 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [custom]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7507TRPBF	8 nC	1.25 W	Logic Level Gate	20 V	700 mV	MOSFET (Metal Oxide)	Micro8™	N and P-Channel	Surface Mount	140 mOhm	1.7 A 2.4 A	-55 °C	150 °C	8-MSOP 8-TSSOP	0.118 in	3 mm	260 pF
Infineon Technologies IRF7507TR	8 nC	1.25 W	Logic Level Gate	20 V	700 mV	MOSFET (Metal Oxide)	Micro8™	N and P-Channel	Surface Mount	140 mOhm	1.7 A 2.4 A			8-MSOP 8-TSSOP	0.118 in	3 mm	260 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRF7507 Series

The IRF7507TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<lt/>1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.