Beta
⌘K
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 2.4 A, 2.4 A, 0.085 OHM
| Part | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Configuration | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [custom] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8 nC | 1.25 W | Logic Level Gate | 20 V | 700 mV | MOSFET (Metal Oxide) | Micro8™ | N and P-Channel | Surface Mount | 140 mOhm | 1.7 A 2.4 A | -55 °C | 150 °C | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | 260 pF |
Infineon Technologies | 8 nC | 1.25 W | Logic Level Gate | 20 V | 700 mV | MOSFET (Metal Oxide) | Micro8™ | N and P-Channel | Surface Mount | 140 mOhm | 1.7 A 2.4 A | 8-MSOP 8-TSSOP | 0.118 in | 3 mm | 260 pF |