IRF7507TR

Obsolete

Infineon Technologies

MOSFET N/P-CH 20V MICRO8

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N/P-CH 20V MICRO8

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7507TR

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.7 A, 2.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Package / Case	8-MSOP, 8-TSSOP
Package / Case	3 mm
Package / Case [custom]	0.118 in
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	Micro8™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	700 mV

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	FET Feature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Configuration	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [custom]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7507TRPBF	8 nC	1.25 W	Logic Level Gate	20 V	700 mV	MOSFET (Metal Oxide)	Micro8™	N and P-Channel	Surface Mount	140 mOhm	1.7 A 2.4 A	-55 °C	150 °C	8-MSOP 8-TSSOP	0.118 in	3 mm	260 pF
Infineon Technologies IRF7507TR	8 nC	1.25 W	Logic Level Gate	20 V	700 mV	MOSFET (Metal Oxide)	Micro8™	N and P-Channel	Surface Mount	140 mOhm	1.7 A 2.4 A			8-MSOP 8-TSSOP	0.118 in	3 mm	260 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 2.4A, 1.7A 1.25W Surface Mount Micro8™

Technical documentation and resources