DMT6017LDV-13

Active

Diodes Inc

65V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Recommended Soldering Techniques +1

DMT6017LDV-13

Active

Diodes Inc

65V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMT6017LDV-13

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25.3 A
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	PowerDI3333-8 (Type UXC)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.3 V

DMT6017LFV Series

65V N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration
Diodes Inc DMT6017LFV-7	891 pF	65 V	MOSFET (Metal Oxide)	2.12 W 39.06 W	16 V	Surface Mount	N-Channel	4.5 V 10 V	8-PowerVDFN	36 A	2.3 V	20 mOhm	-55 °C	150 °C	15.3 nC	PowerDI3333-8 (Type UX)
Diodes Inc DMT6017LDV-13			MOSFET (Metal Oxide)			Surface Mount			8-PowerVDFN	25.3 A	2.3 V	22 mOhm	-55 °C	150 °C		PowerDI3333-8 (Type UXC)	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.33
		6000	$ 0.30
		9000	$ 0.29

Description

General part information

DMT6017LFV Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.