DMT6017LFV Series

65V N-Channel Enhancement Mode MOSFET

Catalog

65V N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Configuration
Diodes Inc DMT6017LFV-7	891 pF	65 V	MOSFET (Metal Oxide)	2.12 W 39.06 W	16 V	Surface Mount	N-Channel	4.5 V 10 V	8-PowerVDFN	36 A	2.3 V	20 mOhm	-55 °C	150 °C	15.3 nC	PowerDI3333-8 (Type UX)
Diodes Inc DMT6017LDV-13			MOSFET (Metal Oxide)			Surface Mount			8-PowerVDFN	25.3 A	2.3 V	22 mOhm	-55 °C	150 °C		PowerDI3333-8 (Type UXC)	2 N-Channel (Dual)

Catalog

65V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application

• Low RDS(ON) — Ensures On-State Losses are Minimized

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.