DMT6017LFV-7
ActiveDiodes Inc
65V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMT6017LFV-7
ActiveDiodes Inc
65V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT6017LFV-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 65 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 891 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 39.06 W, 2.12 W |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | PowerDI3333-8 (Type UX) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.88 | |
| 10 | $ 0.55 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.27 | |||
| 1000 | $ 0.25 | |||
| Digi-Reel® | 1 | $ 0.88 | ||
| 10 | $ 0.55 | |||
| 100 | $ 0.36 | |||
| 500 | $ 0.27 | |||
| 1000 | $ 0.25 | |||
| Tape & Reel (TR) | 2000 | $ 0.22 | ||
| 4000 | $ 0.20 | |||
| 6000 | $ 0.19 | |||
| 10000 | $ 0.18 | |||
| 14000 | $ 0.18 | |||
| 20000 | $ 0.17 | |||
Description
General part information
DMT6017LFV Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources