CSD86311W1723

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE WLP1.7 MM X 2.3 MM, 42 MOHM

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CSD86311W1723

Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, DUAL COMMON SOURCE WLP1.7 MM X 2.3 MM, 42 MOHM

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Description Specifications Series Pricing CAD Documents

Description

General part information

CSD86311W1723 Series

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications

Technical Specifications

Parameters and characteristics for this part

Specification	CSD86311W1723

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id)	4.5 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Max)	4 nC
Input Capacitance (Ciss) (Max)	585 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	DSBGA, 12-UFBGA
Package Name	12-DSBGA
Power - Max	1.5 W
Rds On (Max)	39 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.4 V

CSD86311W1723 Series

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Part	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id)	Power - Max	Drain to Source Voltage (Vdss)	Rds On (Max)	Mounting Type	Package / Case	Package Name	Technology	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)
Texas Instruments CSD86311W1723	2	N-Channel	Dual	4.5 A	1.5 W	25 V	39 mOhm	Surface Mount	12-UFBGA DSBGA	12-DSBGA	MOSFET (Metal Oxide)	4 nC	1.4 V	585 pF	Logic Level Gate	-55 °C	150 °C