CSD86311W1723 Series

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Part	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id)	Power - Max	Drain to Source Voltage (Vdss)	Rds On (Max)	Mounting Type	Package / Case	Package Name	Technology	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	FET Feature	Operating Temperature (Min)	Operating Temperature (Max)
Texas Instruments CSD86311W1723	2	N-Channel	Dual	4.5 A	1.5 W	25 V	39 mOhm	Surface Mount	12-UFBGA DSBGA	12-DSBGA	MOSFET (Metal Oxide)	4 nC	1.4 V	585 pF	Logic Level Gate	-55 °C	150 °C

Catalog

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications