CSD25310Q2
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 23.9 MOHM
CSD25310Q2
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 23.9 MOHM
Description
General part information
CSD25310Q2 Series
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
This 19.9mΩ, –20V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2mm × 2mm plastic package make the device ideal for battery operated space constrained operations.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD25310Q2 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 20 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 4.7 nC |
| Input Capacitance (Ciss) (Max) | 655 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-WDFN Exposed Pad |
| Package Length | 2 mm |
| Package Name | 6-WSON |
| Package Width | 2 mm |
| Power Dissipation (Max) | 2.9 W |
| Rds On (Max) | 23.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1.1 V |
Pricing
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