CSD25310Q2 Series

Catalog

-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 23.9 MOHM

Part	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Rds On (Max)	Package / Case	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Package Width	Package Name	Package Length	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)
Texas Instruments CSD25310Q2T	655 pF	20 A	MOSFET (Metal Oxide)	23.9 mOhm	6-WDFN Exposed Pad	2.9 W	8 V	Surface Mount	-55 °C	150 °C	P-Channel	20 V	2 mm	6-WSON	2 mm	4.7 nC	4.5 V	1.8 V	1.1 V
Texas Instruments CSD25310Q2	655 pF	20 A	MOSFET (Metal Oxide)	23.9 mOhm	6-WDFN Exposed Pad	2.9 W	8 V	Surface Mount	-55 °C	150 °C	P-Channel	20 V	2 mm	6-WSON	2 mm	4.7 nC	4.5 V	1.8 V	1.1 V