IXFT30N60P

Obsolete

IXYS

MOSFET N-CH 600V 30A TO268

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Obsolete

IXYS

MOSFET N-CH 600V 30A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT30N60P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	82 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFT30N85XHV	10 V	30 A	MOSFET (Metal Oxide)	68 nC	N-Channel	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	Surface Mount	TO-268HV (IXFT)	2460 pF	220 mOhm	850 V	5.5 V	30 V	695 W
IXYS IXFT30N60P	10 V	30 A	MOSFET (Metal Oxide)	82 nC	N-Channel	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	Surface Mount	TO-268AA	4000 pF	240 mOhm	600 V	5 V	30 V	500 W
IXYS IXFT30N50Q3	10 V	30 A	MOSFET (Metal Oxide)		N-Channel	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	Surface Mount	TO-268AA	3200 pF	200 mOhm	500 V	6.5 V	20 V	690 W	62 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 30A (Tc) 500W (Tc) Surface Mount TO-268AA

Technical documentation and resources

No documents available