MOSFET N-CH 850V 30A TO268
| Part | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 10 V | 30 A | MOSFET (Metal Oxide) | 68 nC | N-Channel | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | -55 °C | 150 °C | Surface Mount | TO-268HV (IXFT) | 2460 pF | 220 mOhm | 850 V | 5.5 V | 30 V | 695 W | |
IXYS | 10 V | 30 A | MOSFET (Metal Oxide) | 82 nC | N-Channel | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | -55 °C | 150 °C | Surface Mount | TO-268AA | 4000 pF | 240 mOhm | 600 V | 5 V | 30 V | 500 W | |
IXYS | 10 V | 30 A | MOSFET (Metal Oxide) | N-Channel | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | -55 °C | 150 °C | Surface Mount | TO-268AA | 3200 pF | 200 mOhm | 500 V | 6.5 V | 20 V | 690 W | 62 nC |