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IXFT30N85XHV - TO-263

IXFT30N85XHV

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IXYS

MOSFET N-CH 850V 30A TO268

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IXFT30N85XHV - TO-263

IXFT30N85XHV

Active
IXYS

MOSFET N-CH 850V 30A TO268

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFT30N85XHV
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)850 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]68 nC
Input Capacitance (Ciss) (Max) @ Vds2460 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)695 W
Rds On (Max) @ Id, Vgs220 mOhm
Supplier Device PackageTO-268HV (IXFT)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 8.00

Description

General part information

IXFT30 Series

N-Channel 850 V 30A (Tc) 695W (Tc) Surface Mount TO-268HV (IXFT)

Documents

Technical documentation and resources

No documents available