MASTERGAN2TR
LTBHIGH POWER DENSITY 600V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
MASTERGAN2TR
LTBHIGH POWER DENSITY 600V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
Description
General part information
MASTERGAN2 Series
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
Technical Specifications
Parameters and characteristics for this part
| Specification | MASTERGAN2TR |
|---|---|
| Applications | General Purpose |
| Current - Output / Channel (Channel 1) | 6.5 A |
| Current - Output / Channel (Channel 2) | 10 A |
| Current - Peak Output | 17 A |
| Fault Protection | Over Temperature, UVLO |
| Features | Bootstrap Circuit |
| Load Type | Capacitive, Inductive |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Output Configuration | Half Bridge |
| Package / Case | 31-VQFN Exposed Pad |
| Package Length | 9 mm |
| Package Name | 31-QFN |
| Package Width | 9 mm |
| Rds On (Typ) HS | 225 mOhm |
| Rds On (Typ) LS | 150 mOhm |
| Technology | DMOS |
| Voltage - Load (Max) | 600 V |
| Voltage - Supply (Maximum) | 4.75 V |
| Voltage - Supply (Minimum) | 4.75 V |
Pricing
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CAD
3D models and CAD resources for this part
