MASTERGAN2
ActiveHIGH POWER DENSITY 600V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
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MASTERGAN2
ActiveHIGH POWER DENSITY 600V HALF BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MASTERGAN2 |
|---|---|
| Applications | Power Supplies |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 31-VQFN Exposed Pad |
| Supplier Device Package | 31-QFN (9x9) |
| Voltage - Supply [Max] | 15 V |
| Voltage - Supply [Min] | 3.3 V |
Pricing
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Description
General part information
MASTERGAN2 Series
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON)of 150 mΩ and 225 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN2 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.