Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | LPC662AIM | LPC662 Series |
|---|---|---|
| Amplifier Type | CMOS | CMOS |
| Current - Input Bias | 0.002 pA | 0.002 pA |
| Current - Output / Channel | 40 mA | 40 mA |
| Current - Supply | 86 µA | 86 µA |
| Gain Bandwidth Product | 350 kHz | 350 kHz |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Circuits | 2 | 2 |
| Operating Temperature [Max] | 85 °C | 85 °C |
| Operating Temperature [Min] | -40 °C | -40 °C |
| Output Type | Rail-to-Rail, Push-Pull | Rail-to-Rail, Push-Pull |
| Package / Case | 3.9 mm | 3.9 mm |
| Package / Case | 8-SOIC | 8-SOIC |
| Slew Rate | 0.11 V/µs | 0.11 V/µs |
| Supplier Device Package | 8-SOIC | 8-SOIC |
| Voltage - Input Offset | 1 mV | 1 mV |
| Voltage - Supply Span (Max) [Max] | 15.5 V | 15.5 V |
| Voltage - Supply Span (Min) [Min] | 4.75 V | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
LPC662 Series
DUAL, 15-V, 350-KHZ OPERATIONAL AMPLIFIER
| Part | Voltage - Supply Span (Min) [Min] | Supplier Device Package | Slew Rate | Amplifier Type | Mounting Type | Package / Case | Package / Case | Current - Output / Channel | Number of Circuits | Current - Input Bias | Output Type | Voltage - Input Offset | Gain Bandwidth Product | Operating Temperature [Min] | Operating Temperature [Max] | Current - Supply | Voltage - Supply Span (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments LPC662IM/NOPBThe LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. | 4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V |
Texas Instruments LPC662AIM/NOPBThe LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. | 4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V |
Texas Instruments LPC662AIMX/NOPBThe LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. | 4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V |
4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V | |
4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V | |
Texas Instruments LPC662IMX/NOPBThe LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.
The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.
This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.
See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. | 4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V |
4.75 V | 8-SOIC | 0.11 V/µs | CMOS | Surface Mount | 3.9 mm | 8-SOIC | 40 mA | 2 | 0.002 pA | Push-Pull, Rail-to-Rail | 1 mV | 350 kHz | -40 °C | 85 °C | 86 µA | 15.5 V |
Description
General part information
LPC662 Series
CMOS Amplifier 2 Circuit Push-Pull, Rail-to-Rail 8-SOIC