LPC662IMX/NOPB

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Texas Instruments

DUAL, 15-V, 350-KHZ OPERATIONAL AMPLIFIER

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DocumentsLPC662 Low Power CMOS Dual Operational Amplifier datasheet (Rev. B)

LPC662IMX/NOPB

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Texas Instruments

DUAL, 15-V, 350-KHZ OPERATIONAL AMPLIFIER

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DocumentsLPC662 Low Power CMOS Dual Operational Amplifier datasheet (Rev. B)

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	LPC662IMX/NOPB	LPC662 Series

Amplifier Type	CMOS	CMOS
Current - Input Bias	0.002 pA	0.002 pA
Current - Output / Channel	40 mA	40 mA
Current - Supply	86 µA	86 µA
Gain Bandwidth Product	350 kHz	350 kHz
Mounting Type	Surface Mount	Surface Mount
Number of Circuits	2	2
Operating Temperature [Max]	85 °C	85 °C
Operating Temperature [Min]	-40 °C	-40 °C
Output Type	Rail-to-Rail, Push-Pull	Rail-to-Rail, Push-Pull
Package / Case	3.9 mm	3.9 mm
Package / Case	8-SOIC	8-SOIC
Slew Rate	0.11 V/µs	0.11 V/µs
Supplier Device Package	8-SOIC	8-SOIC
Voltage - Input Offset	1 mV	1 mV
Voltage - Supply Span (Max) [Max]	15.5 V	15.5 V
Voltage - Supply Span (Min) [Min]	4.75 V	4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.30
		10	$ 2.96
		25	$ 2.80
		100	$ 2.43
		250	$ 2.30
		500	$ 2.07
		1000	$ 1.74
	Digi-Reel®	1	$ 3.30
		10	$ 2.96
		25	$ 2.80
		100	$ 2.43
		250	$ 2.30
		500	$ 2.07
		1000	$ 1.74
	Tape & Reel (TR)	2500	$ 1.65
		5000	$ 1.59
Texas Instruments	LARGE T&R	1	$ 2.86
		100	$ 2.51
		250	$ 1.76
		1000	$ 1.42

LPC662 Series

DUAL, 15-V, 350-KHZ OPERATIONAL AMPLIFIER

Part	Voltage - Supply Span (Min) [Min]	Supplier Device Package	Slew Rate	Amplifier Type	Mounting Type	Package / Case	Package / Case	Current - Output / Channel	Number of Circuits	Current - Input Bias	Output Type	Voltage - Input Offset	Gain Bandwidth Product	Operating Temperature [Min]	Operating Temperature [Max]	Current - Supply	Voltage - Supply Span (Max) [Max]
Texas Instruments LPC662IM/NOPB The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662AIM/NOPB The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662AIMX/NOPB The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662IMX CMOS Amplifier 2 Circuit Push-Pull, Rail-to-Rail 8-SOIC	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662AIMX CMOS Amplifier 2 Circuit Push-Pull, Rail-to-Rail 8-SOIC	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662IMX/NOPB The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V
Texas Instruments LPC662AIM CMOS Amplifier 2 Circuit Push-Pull, Rail-to-Rail 8-SOIC	4.75 V	8-SOIC	0.11 V/µs	CMOS	Surface Mount	3.9 mm	8-SOIC	40 mA	2	0.002 pA	Push-Pull, Rail-to-Rail	1 mV	350 kHz	-40 °C	85 °C	86 µA	15.5 V

Description

General part information

LPC662 Series

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kand 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.

Documents

Technical documentation and resources

LPC662 Low Power CMOS Dual Operational Amplifier datasheet (Rev. B)

Data sheet