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DMN52D0U-7 - SOT-23-3

DMN52D0U-7

Active
Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN52D0U-7 - SOT-23-3

DMN52D0U-7

Active
Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN52D0U-7
Current - Continuous Drain (Id) @ 25°C400 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.5 nC
Input Capacitance (Ciss) (Max) @ Vds39 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.05
15000$ 0.05
21000$ 0.05
30000$ 0.04
75000$ 0.04
150000$ 0.04

Description

General part information

DMN52D0UDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switches and level switches.