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DMN52D0UWQ-13 - Package Image for SOT323

DMN52D0UWQ-13

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Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN52D0UWQ-13 - Package Image for SOT323

DMN52D0UWQ-13

Active
Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN52D0UWQ-13
Current - Continuous Drain (Id) @ 25°C380 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1.4 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds39 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max)400 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.05
20000$ 0.04
30000$ 0.04
50000$ 0.04
70000$ 0.04
100000$ 0.04
250000$ 0.03

Description

General part information

DMN52D0UDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switches and level switches.