Zenode.ai Logo
Beta
K
DMN52D0UDWQ-7 - Package Image for SOT363

DMN52D0UDWQ-7

Active
Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMN52D0UDWQ-7 - Package Image for SOT363

DMN52D0UDWQ-7

Active
Diodes Inc

50V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN52D0UDWQ-7
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C350 mA
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs [Max]1.5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds42.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.07
6000$ 0.07
15000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05

Description

General part information

DMN52D0UDWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in load switches and level switches.