
IPI90R1K2C3XKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 900V 5.1A TO262-3
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IPI90R1K2C3XKSA1
ObsoleteInfineon Technologies
MOSFET N-CH 900V 5.1A TO262-3
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPI90R1K2C3XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.1 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 83 W |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
IPI90R Series
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Package / Case | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO262-3 | -55 °C | 150 °C | 3.5 V | 900 V | 20 V | 5.7 A | N-Channel | 1 Ohm | 34 nC | MOSFET (Metal Oxide) | 10 V | 850 pF | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | ||||
Infineon Technologies | PG-TO262-3 | -55 °C | 150 °C | 3.5 V | 900 V | 20 V | 6.9 A | N-Channel | 42 nC | MOSFET (Metal Oxide) | 10 V | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | 104 W | 800 mOhm | ||||
Infineon Technologies | PG-TO262-3 | -55 °C | 150 °C | 3.5 V | 900 V | 20 V | 15 A | N-Channel | 94 nC | MOSFET (Metal Oxide) | 10 V | 2400 pF | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | 208 W | 340 mOhm | |||
Infineon Technologies | PG-TO262-3 | -55 °C | 150 °C | 3.5 V | 900 V | 20 V | 5.1 A | N-Channel | 1.2 Ohm | MOSFET (Metal Oxide) | 10 V | Through Hole | I2PAK TO-262-3 Long Leads TO-262AA | 83 W | 28 nC | 710 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPI90R Series
N-Channel 900 V 5.1A (Tc) 83W (Tc) Through Hole PG-TO262-3
Documents
Technical documentation and resources