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IPI90R800C3XKSA1 - AUIRFSL6535

IPI90R800C3XKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 900V 6.9A TO262-3

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IPI90R800C3XKSA1 - AUIRFSL6535

IPI90R800C3XKSA1

Obsolete
Infineon Technologies

MOSFET N-CH 900V 6.9A TO262-3

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPI90R800C3XKSA1
Current - Continuous Drain (Id) @ 25°C6.9 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs [Max]800 mOhm
Supplier Device PackagePG-TO262-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

IPI90R Series

N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO262-3

Documents

Technical documentation and resources