IPI90R Series

Catalog

MOSFET N-CH 900V 5.7A TO262-3

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPI90R1K0C3XKSA1	PG-TO262-3	-55 °C	150 °C	3.5 V	900 V	20 V	5.7 A	N-Channel	1 Ohm	34 nC	MOSFET (Metal Oxide)	10 V	850 pF	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA
Infineon Technologies IPI90R800C3XKSA1	PG-TO262-3	-55 °C	150 °C	3.5 V	900 V	20 V	6.9 A	N-Channel		42 nC	MOSFET (Metal Oxide)	10 V		Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	104 W	800 mOhm
Infineon Technologies IPI90R340C3XKSA1	PG-TO262-3	-55 °C	150 °C	3.5 V	900 V	20 V	15 A	N-Channel		94 nC	MOSFET (Metal Oxide)	10 V	2400 pF	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	208 W	340 mOhm
Infineon Technologies IPI90R1K2C3XKSA1	PG-TO262-3	-55 °C	150 °C	3.5 V	900 V	20 V	5.1 A	N-Channel	1.2 Ohm		MOSFET (Metal Oxide)	10 V		Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	83 W		28 nC	710 pF