IPP65R310CFDXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R310CFDXKSA1

Current - Continuous Drain (Id) @ 25°C	11.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	104.2 W
Rds On (Max) @ Id, Vgs	310 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Grade	Technology	Qualification	Mounting Type
Infineon Technologies IPP65R310CFDAAKSA1	N-Channel	1110 pF	150 °C	-40 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V	Automotive	MOSFET (Metal Oxide)	AEC-Q101	Through Hole
Infineon Technologies IPP65R310CFDXKSA2	N-Channel		150 °C	-55 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V		MOSFET (Metal Oxide)		Through Hole
Infineon Technologies IPP65R310CFDXKSA1	N-Channel		150 °C	-55 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V		MOSFET (Metal Oxide)		Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO220-3

Technical documentation and resources

No documents available