IPP65R310CFDXKSA2

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Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 310 MOHM; FAST RECOVERY DIODE

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IPP65R310CFDXKSA2

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Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 310 MOHM; FAST RECOVERY DIODE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPP65R310CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	11.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	104.2 W
Rds On (Max) @ Id, Vgs	310 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPP65R310 Series

Part	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Grade	Technology	Qualification	Mounting Type
Infineon Technologies IPP65R310CFDAAKSA1	N-Channel	1110 pF	150 °C	-40 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V	Automotive	MOSFET (Metal Oxide)	AEC-Q101	Through Hole
Infineon Technologies IPP65R310CFDXKSA2	N-Channel		150 °C	-55 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V		MOSFET (Metal Oxide)		Through Hole
Infineon Technologies IPP65R310CFDXKSA1	N-Channel		150 °C	-55 °C	41 nC	TO-220-3	310 mOhm	20 V	PG-TO220-3	10 V	650 V	104.2 W	11.4 A	4.5 V		MOSFET (Metal Oxide)		Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.41
		10	$ 2.23
		100	$ 1.55
		500	$ 1.26
		1000	$ 1.17
		2000	$ 1.13

Description

General part information

IPP65R310 Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

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Technical documentation and resources