
IPP65R310CFDAAKSA1
NRNDInfineon Technologies
MOSFET N-CH 650V 11.4A TO220-3
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IPP65R310CFDAAKSA1
NRNDInfineon Technologies
MOSFET N-CH 650V 11.4A TO220-3
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP65R310CFDAAKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 41 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 104.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 310 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 500 | $ 1.35 | |
Description
General part information
IPP65R310 Series
N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO220-3
Documents
Technical documentation and resources