STPSC20H12G-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 129 NC, TO-263 (D2PAK)
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STPSC20H12G-TR
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 20 A, 129 NC, TO-263 (D2PAK)
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Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC20H12G-TR |
|---|---|
| Capacitance @ Vr, F | 1650 pF |
| Current - Reverse Leakage @ Vr | 120 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | D2PAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 9.11 | |
| 10 | $ 6.65 | |||
| 100 | $ 5.21 | |||
| 500 | $ 4.80 | |||
| 1000 | $ 4.79 | |||
| Digikey | Cut Tape (CT) | 1 | $ 8.82 | |
| 10 | $ 7.56 | |||
| 100 | $ 6.30 | |||
| 500 | $ 5.56 | |||
| Digi-Reel® | 1 | $ 8.82 | ||
| 10 | $ 7.56 | |||
| 100 | $ 6.30 | |||
| 500 | $ 5.56 | |||
| Tape & Reel (TR) | 1000 | $ 5.00 | ||
| 2000 | $ 4.69 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 11.82 | |
| 10 | $ 9.47 | |||
| 25 | $ 9.11 | |||
| 50 | $ 8.41 | |||
| 100 | $ 7.71 | |||
| 250 | $ 7.45 | |||
| 500 | $ 7.19 | |||
| 1000 | $ 7.18 | |||
Description
General part information
STPSC20H065CWLY Series
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.