Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC20H12CWL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 25 A |
| Current - Reverse Leakage @ Vr | 60 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
STPSC20H065CWLY Series
Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode
| Part | Technology | Mounting Type | Package / Case | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Supplier Device Package | Speed | Diode Configuration | Qualification | Current - Average Rectified (Io) (per Diode) | Speed | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | SiC (Silicon Carbide) Schottky | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -40 °C | 175 ░C | 120 µA | 1650 pF | 1.5 V | 1.2 kV | 0 ns | D2PAK HV | No Recovery Time | |||||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Through Hole | TO-220-3 | -40 °C | 175 ░C | 100 µA | 1.75 V | 650 V | TO-220 | 1 Pair Common Cathode | AEC-Q101 | 10 A | 200 mA 500 ns | Automotive | |||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-3 | -40 °C | 175 ░C | 60 µA | 1.5 V | 1.2 kV | 0 ns | TO-247-3 | No Recovery Time | 1 Pair Common Cathode | 25 A | ||||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-2 | -55 C | 175 ░C | 150 µA | 1.5 V | 1.2 kV | DO-247 LL | AEC-Q101 | 200 mA 500 ns | Automotive | |||||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-2 | -55 C | 175 ░C | 150 µA | 1548 pF | 1.5 V | 1.2 kV | DO-247 LL | 200 mA 500 ns | ||||||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -40 °C | 175 ░C | 120 µA | 1650 pF | 1.5 V | 1.2 kV | 0 ns | D2PAK | No Recovery Time | |||||
STMicroelectronics | SiC (Silicon Carbide) Schottky | Through Hole | TO-247-3 | -40 °C | 175 ░C | 100 µA | 1.65 V | 650 V | 0 ns | TO-247-3 | No Recovery Time | 1 Pair Common Cathode | AEC-Q101 | 10 A | Automotive |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC20H065CWLY Series
The SiC diode, available in DO-247 with long leads, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.