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DMTH6016LPSQ-13 - DMPH4015SPSQ-13

DMTH6016LPSQ-13

Active
Diodes Inc

TRANS MOSFET N-CH 60V 10.6A 8-PIN POWERDI EP T/R AUTOMOTIVE AEC-Q101

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DMTH6016LPSQ-13 - DMPH4015SPSQ-13

DMTH6016LPSQ-13

Active
Diodes Inc

TRANS MOSFET N-CH 60V 10.6A 8-PIN POWERDI EP T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH6016LPSQ-13
Current - Continuous Drain (Id) @ 25°C37 A, 9.8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds864 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.6 W, 37.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

DMTH6016LFDFWQ Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

PartRds On (Max) @ Id, Vgs [Max]Input Capacitance (Ciss) (Max) @ VdsGradePackage / CaseCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsQualificationSupplier Device PackageVgs(th) (Max) @ IdConfigurationTechnologyMounting TypeOperating Temperature [Min]Operating Temperature [Max]Power - MaxFET TypeDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Power Dissipation (Max)Rds On (Max) @ Id, VgsPower Dissipation (Max) [Max]Power - Max [Max]Power - Max [Min]Package / Case [y]Package / Case [x]
Diodes Inc
19 mOhm
864 pF
Automotive
8-PowerTDFN
9.2 A
33.2 A
60 V
17 nC
AEC-Q101
PowerDI5060-8
2.5 V
2 N-Channel (Dual)
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
2.5 W
37.5 W
Diodes Inc
864 pF
Automotive
8-PowerTDFN
9.8 A
37 A
60 V
17 nC
AEC-Q101
PowerDI5060-8
2.5 V
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
2.6 W
37.5 W
16 mOhm
Diodes Inc
939 pF
Automotive
8-PowerVDFN
41 A
60 V
15.1 nC
AEC-Q101
PowerDI3333-8 (SWP) Type UX
2.5 V
MOSFET (Metal Oxide)
Surface Mount
Wettable Flank
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
1.2 W
16 mOhm
925 pF
Automotive
6-UDFN Exposed Pad
9.4 A
60 V
15.3 nC
AEC-Q101
U-DFN2020-6 (SWP) (Type F)
3 V
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
1.06 W
18 mOhm
Diodes Inc
864 pF
Automotive
8-PowerTDFN
10.6 A
37.1 A
60 V
17 nC
AEC-Q101
PowerDI5060-8
2.5 V
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
16 mOhm
3 W
37.5 W
Diodes Inc
19.5 mOhm
864 pF
Automotive
8-SOIC
7.6 A
60 V
17 nC
AEC-Q101
8-SO
2.5 V
2 N-Channel (Dual)
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
1.9 W
1.4 W
3.9 mm
0.154 in
925 pF
6-UDFN Exposed Pad
9.4 A
60 V
15.3 nC
U-DFN2020-6 (SWP) (Type F)
3 V
MOSFET (Metal Oxide)
Surface Mount
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
1.06 W
18 mOhm
Diodes Inc
19.5 mOhm
864 pF
Automotive
8-SOIC
7.6 A
17 nC
AEC-Q101
8-SOIC
2.5 V
2 N-Channel (Dual)
MOSFET (Metal Oxide)
Surface Mount
-55 °C
150 °C
3.9 mm
0.154 in
Diodes Inc
939 pF
Automotive
8-PowerVDFN
41 A
60 V
15.1 nC
AEC-Q101
PowerDI3333-8 (SWP) Type UX
2.5 V
MOSFET (Metal Oxide)
Surface Mount
Wettable Flank
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
1.2 W
16 mOhm
939 pF
Automotive
8-PowerVDFN
41 A
60 V
15.1 nC
AEC-Q101
PowerDI3333-8 (SWP) Type UX
2.5 V
MOSFET (Metal Oxide)
Surface Mount
Wettable Flank
-55 °C
175 ░C
N-Channel
4.5 V
10 V
20 V
1.17 W
16 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.61
10$ 0.52
100$ 0.36
500$ 0.28
1000$ 0.23
Digi-Reel® 1$ 0.61
10$ 0.52
100$ 0.36
500$ 0.28
1000$ 0.23
Tape & Reel (TR) 2500$ 0.20
5000$ 0.19
12500$ 0.18
25000$ 0.18

Description

General part information

DMTH6016LFDFWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.