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DMTH6016LFVWQ-7-A - 8-PowerVDFN_BOTTOM

DMTH6016LFVWQ-7-A

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Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH6016LFVWQ-7-A - 8-PowerVDFN_BOTTOM

DMTH6016LFVWQ-7-A

Active
Diodes Inc

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH6016LFVWQ-7-A
Current - Continuous Drain (Id) @ 25°C41 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds939 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.17 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.32
6000$ 0.30
10000$ 0.28

Description

General part information

DMTH6016LFDFWQ Series

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.

Documents

Technical documentation and resources