DMTH6016LFDFWQ Series

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Grade	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Qualification	Supplier Device Package	Vgs(th) (Max) @ Id	Configuration	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Power - Max [Max]	Power - Max [Min]	Package / Case [y]	Package / Case [x]
Diodes Inc DMTH6016LPDQ-13	19 mOhm	864 pF	Automotive	8-PowerTDFN	9.2 A 33.2 A	60 V	17 nC	AEC-Q101	PowerDI5060-8	2.5 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C	2.5 W 37.5 W
Diodes Inc DMTH6016LPSQ-13		864 pF	Automotive	8-PowerTDFN	9.8 A 37 A	60 V	17 nC	AEC-Q101	PowerDI5060-8	2.5 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	2.6 W 37.5 W	16 mOhm
Diodes Inc DMTH6016LFVW-13		939 pF	Automotive	8-PowerVDFN	41 A	60 V	15.1 nC	AEC-Q101	PowerDI3333-8 (SWP) Type UX	2.5 V		MOSFET (Metal Oxide)	Surface Mount Wettable Flank	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	1.2 W	16 mOhm
Diodes Inc DMTH6016LFDFW-13		925 pF	Automotive	6-UDFN Exposed Pad	9.4 A	60 V	15.3 nC	AEC-Q101	U-DFN2020-6 (SWP) (Type F)	3 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	1.06 W	18 mOhm
Diodes Inc DMTH6016LPS-13		864 pF	Automotive	8-PowerTDFN	10.6 A 37.1 A	60 V	17 nC	AEC-Q101	PowerDI5060-8	2.5 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V		16 mOhm	3 W 37.5 W
Diodes Inc DMTH6016LSDQ-13	19.5 mOhm	864 pF	Automotive	8-SOIC	7.6 A	60 V	17 nC	AEC-Q101	8-SO	2.5 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C								1.9 W	1.4 W	3.9 mm	0.154 in
Diodes Inc DMTH6016LFDFWQ-13		925 pF		6-UDFN Exposed Pad	9.4 A	60 V	15.3 nC		U-DFN2020-6 (SWP) (Type F)	3 V		MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	1.06 W	18 mOhm
Diodes Inc DMTH6016LSD-13	19.5 mOhm	864 pF	Automotive	8-SOIC	7.6 A		17 nC	AEC-Q101	8-SOIC	2.5 V	2 N-Channel (Dual)	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C										3.9 mm	0.154 in
Diodes Inc DMTH6016LFVW-7		939 pF	Automotive	8-PowerVDFN	41 A	60 V	15.1 nC	AEC-Q101	PowerDI3333-8 (SWP) Type UX	2.5 V		MOSFET (Metal Oxide)	Surface Mount Wettable Flank	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	1.2 W	16 mOhm
Diodes Inc DMTH6016LFVWQ-7-A		939 pF	Automotive	8-PowerVDFN	41 A	60 V	15.1 nC	AEC-Q101	PowerDI3333-8 (SWP) Type UX	2.5 V		MOSFET (Metal Oxide)	Surface Mount Wettable Flank	-55 °C	175 ░C		N-Channel	4.5 V 10 V	20 V	1.17 W	16 mOhm

Catalog

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production –

• Ensures More Reliable and Robust End Application

• Small form factor thermally efficient package enables higher density end products

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH6016LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.