IR2301SPBF

NRND

Infineon Technologies

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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IR2301SPBF

NRND

Infineon Technologies

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2301SPBF

Channel Type	Independent
Driven Configuration	High-Side, Low-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	130 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

IR2301 Series

Part	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Input Type	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Package / Case	Package / Case
Infineon Technologies IR2301SPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STRPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies 98-0343	8-SOIC	3.9 mm	0.154 in	Half-Bridge	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STR	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301	8-DIP			High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Through Hole	130 ns	50 ns	8-PDIP	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.60
		10	$ 2.34
		95	$ 1.88
		285	$ 1.76
		570	$ 1.54
		1045	$ 1.28
		2565	$ 1.19
		5035	$ 1.15
Newark	Each	1	$ 2.42
		10	$ 1.80
		100	$ 1.48
		500	$ 1.38
		1000	$ 1.33
		2500	$ 1.30
		7600	$ 1.26

Description

General part information

IR2301 Series

600 Vhigh and low-sidegate driver ICforIGBTsandMOSFETswith typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP.

Documents

Technical documentation and resources

No documents available