IR2301 Series

Catalog

EICEDRIVER™ 600 V HIGH-SIDE AND LOW-SIDE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH MOSFETS.

Part	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Input Type	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Package / Case	Package / Case
Infineon Technologies IR2301SPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STRPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies 98-0343	8-SOIC	3.9 mm	0.154 in	Half-Bridge	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STR	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301	8-DIP			High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Through Hole	130 ns	50 ns	8-PDIP	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm