IR2301

Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8DIP

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Obsolete

Infineon Technologies

IC GATE DRVR HI/LOW SIDE 8DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IR2301

Channel Type	Independent
Driven Configuration	High-Side, Low-Side
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	130 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Number of Drivers	Input Type	Logic Voltage - VIL, VIH	Voltage - Supply [Min]	Voltage - Supply [Max]	Gate Type	Package / Case	Package / Case
Infineon Technologies IR2301SPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STRPBF	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies 98-0343	8-SOIC	3.9 mm	0.154 in	Half-Bridge	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301STR	8-SOIC	3.9 mm	0.154 in	High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Surface Mount	130 ns	50 ns	8-SOIC	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT N-Channel MOSFET
Infineon Technologies IR2301	8-DIP			High-Side Low-Side	Independent	150 °C	-40 °C	600 V	Through Hole	130 ns	50 ns	8-PDIP	2	Non-Inverting	0.8 V 2.9 V	5 V	20 V	IGBT MOSFET N-Channel MOSFET	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

High-Side or Low-Side Gate Driver IC Non-Inverting 8-PDIP

Technical documentation and resources

No documents available