IPB120N08S403ATMA1

Obsolete

Infineon Technologies

INFINEON’S IPB120N08S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IPB120N08S403ATMA1

Obsolete

Infineon Technologies

INFINEON’S IPB120N08S4-03 N-CHANNEL MOSFET, AEC Q101 QUALIFIED, ROHS COMPLIANT, 175°C MAX TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

DocumentsInfineon-MA005711536-MaterialContentSheet-v01_00-EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB120N08S403ATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	167 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	11550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	278 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

IPB120 Series

Part	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB120N08S404ATMA1	N-Channel	Automotive	10 V	20 V	179 W	-55 °C	175 ░C	AEC-Q101	6450 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.1 mOhm	MOSFET (Metal Oxide)	4 V	80 V	95 nC	120 A	Surface Mount
Infineon Technologies IPB120N08S403ATMA1	N-Channel	Automotive	10 V	20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.5 mOhm	MOSFET (Metal Oxide)		80 V	167 nC	120 A	Surface Mount	PG-TO263-3-2	4 V	11550 pF	278 W
Infineon Technologies IPB120N10S403ATMA1	N-Channel	Automotive	10 V	20 V	250 W	-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 mOhm	MOSFET (Metal Oxide)	3.5 V	100 V		120 A	Surface Mount			10120 pF		140 nC
Infineon Technologies IPB120P04P404ATMA1	P-Channel	Automotive	10 V	20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 mOhm	MOSFET (Metal Oxide)	4 V	40 V		120 A	Surface Mount			14790 pF	136 W	205 nC
Infineon Technologies IPB120P04P404ATMA2	P-Channel	Automotive		20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 mOhm	MOSFET (Metal Oxide)	4 V	40 V		120 A	Surface Mount	PG-TO263-3-2		14790 pF	136 W	205 nC
Infineon Technologies IPB120N06S4H1ATMA2	N-Channel	Automotive	10 V	20 V	250 W	-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 mOhm	MOSFET (Metal Oxide)	4 V	60 V	270 nC	120 A	Surface Mount	PG-TO263-3-2		21900 pF
Infineon Technologies IPB120N04S4L02ATMA1	N-Channel	Automotive	4.5 V 10 V	-16 V 20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.7 mOhm	MOSFET (Metal Oxide)	2.2 V	40 V		120 A	Surface Mount			14560 pF	158 W	190 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB120 Series

N-Channel 80 V 120A (Tc) 278W (Tc) Surface Mount PG-TO263-3-2

Documents

Technical documentation and resources

Infineon-MA005711536-MaterialContentSheet-v01_00-EN

Material Content SheetInfo