IPB120N04S4L02ATMA1

Active

Infineon Technologies

IPB120N04S4L-02 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 1.7 MΩ MAX, D2PAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPB120N04S4L02ATMA1

Active

Infineon Technologies

IPB120N04S4L-02 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 1.7 MΩ MAX, D2PAK, OPTIMOS™-T2, AEC QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB120N04S4L02ATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	190 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	14560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	158 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.2 V

IPB120 Series

Part	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPB120N08S404ATMA1	N-Channel	Automotive	10 V	20 V	179 W	-55 °C	175 ░C	AEC-Q101	6450 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.1 mOhm	MOSFET (Metal Oxide)	4 V	80 V	95 nC	120 A	Surface Mount
Infineon Technologies IPB120N08S403ATMA1	N-Channel	Automotive	10 V	20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.5 mOhm	MOSFET (Metal Oxide)		80 V	167 nC	120 A	Surface Mount	PG-TO263-3-2	4 V	11550 pF	278 W
Infineon Technologies IPB120N10S403ATMA1	N-Channel	Automotive	10 V	20 V	250 W	-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 mOhm	MOSFET (Metal Oxide)	3.5 V	100 V		120 A	Surface Mount			10120 pF		140 nC
Infineon Technologies IPB120P04P404ATMA1	P-Channel	Automotive	10 V	20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.5 mOhm	MOSFET (Metal Oxide)	4 V	40 V		120 A	Surface Mount			14790 pF	136 W	205 nC
Infineon Technologies IPB120P04P404ATMA2	P-Channel	Automotive		20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.8 mOhm	MOSFET (Metal Oxide)	4 V	40 V		120 A	Surface Mount	PG-TO263-3-2		14790 pF	136 W	205 nC
Infineon Technologies IPB120N06S4H1ATMA2	N-Channel	Automotive	10 V	20 V	250 W	-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.4 mOhm	MOSFET (Metal Oxide)	4 V	60 V	270 nC	120 A	Surface Mount	PG-TO263-3-2		21900 pF
Infineon Technologies IPB120N04S4L02ATMA1	N-Channel	Automotive	4.5 V 10 V	-16 V 20 V		-55 °C	175 ░C	AEC-Q101		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.7 mOhm	MOSFET (Metal Oxide)	2.2 V	40 V		120 A	Surface Mount			14560 pF	158 W	190 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.04
		10	$ 2.66
		100	$ 1.87
		500	$ 1.54
	Digi-Reel®	1	$ 4.04
		10	$ 2.66
		100	$ 1.87
		500	$ 1.54
	Tape & Reel (TR)	1000	$ 1.42

Description

General part information

IPB120 Series

N-Channel 40 V 120A (Tc) 158W (Tc) Surface Mount PG-TO263-3

Documents

Technical documentation and resources